| PART |
Description |
Maker |
| TH58NS100DC |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 - GBIT (128M X 8 BITS) CMOS NAND E2PROM ( 128M BYTE SmartMediaTM )
|
Toshiba Semiconductor
|
| TC58DVG02A1FT00 TC58DVG02A TC58DVG02A1FT |
Flash - NAND
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
1-GBIT (128M*8 BITS) CMOS NAND E2PROM
|
TOSHIBA[Toshiba Semiconductor]
|
| EDD1216AASE-7A-E EDD1216AASE EDD1216AASE-6B-E |
128M bits DDR SDRAM (8M words x 16 bits)
|
ELPIDA[Elpida Memory]
|
| EDD1232AABH-7A-E EDD1232AABH EDD1232AABH-6B-E |
128M bits DDR SDRAM (4M words x 32 bits)
|
ELPIDA[Elpida Memory]
|
| EDD1216AATA EDD1216AATA-6B-E EDD1216AATA-7B-E EDD1 |
128M bits DDR SDRAM (8M words x 16 bits)
|
http://
ELPIDA MEMORY INC
Elpida Memory, Inc.
|
| EDD1216AATA-7B-E EDD1216AATA EDD1216AATA-6B-E EDD1 |
128M bits DDR SDRAM (8M words x 16 bits)
|
ELPIDA[Elpida Memory]
|
| EBD11ED8ADFB-7B EBD11ED8ADFB EBD11ED8ADFB-6B EBD11 |
1GB Unbuffered DDR SDRAM DIMM (128M words x72 bits, 2 Ranks) 1GB的无缓冲DDR SDRAM的内存（128M的话x72位，2个等级）
1GB Unbuffered DDR SDRAM DIMM (128M words x72 bits, 2 Ranks) 128M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| NAND04G-B |
1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 1千兆千兆位，4千兆位，8千兆112 Byte/1056字的页面.8V/3V，NAND闪存
|
STMicroelectronics N.V.
|
| EDS1216AGTA-6B-E EDS1216AGTA-75-E |
128M bits SDRAM (8M words × 16 bits)
|
Elpida Memory
|
| EDS1232AATA-75L-E EDS1232AATA EDS1232AATA-60 EDS12 |
128M bits SDRAM (4M words x 32 bits)
|
ELPIDA[Elpida Memory]
|
| TC58FVM6T2AXB65 TC58FVM6T2AFT65 TC58FVM6B2AXB65 TC |
64MBIT (8Mx8 BITS/4Mx16 BITS) CMOS FLASH MEMORY
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 东芝马鞍山数字集成电路硅栅CMOS
|
Toshiba Corporation
Toshiba, Corp.
|
| EDS1232ECBH-9A-E |
128M bits SDRAM
|
Elpida Memory
http://
|
